Philip Hens Interface-Phenomena in 3C-SiC Heteroepitaxy on Silicon ISBN: 978-3-8440-0179-2 Preis: 48,80 € / 97,60 SFR |
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The aim of this work was to study different phenomena during the beginning of the heteroepitaxial growth of cubic silicon carbide on silicon substrates. Different steps from substrate preparation to the epitaxial growth had been investigated: 1. Clearing and substrate preparation: The wet chemical cleaning with the standardized RCA process was found not to have any big influence on the surface morphology of the silicon substrates. 2. Etching in hot hydrogen: By a parameter study an optimized recipe was found for the etching in hot hydrogen. With the etching performed at relatively low temperature of 800 C and at low pressure of 20 mbar the lowest roughness could be obtained. 3. Carbonization step: An extensive study was performed on the design of the temperature ramp up during the carbonization step for the seed layer generation. 4. Interface structure: By high resolution TEM a study of the defect distribution around the interface was accomplished. Beside a quite homogeneous array of dislocations directly at the interface compensating the lattice mismatch other dislocations are mainly found in the grown layer, caused for example by thermal stresses. 5. Overgrowth mechanism: By comparing the beginning of the epitaxial growth on polished and on wet chemically textured substrates it was found that a quality advantage of the seed layer on textured material cannot improve the layer quality later on. Beside these effects during the start phase of the heteroepitaxial growth a possible application as a template for the growth of thick freestanding material by sublimation epitaxy was presented. | |
Quelle: World Energy Base (or more simply, ETDEWEB) | |
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